Drivers et Intégr. - Transf. Intégrés

  • See this page in english

    En bref

  • Nombre d'heures : 5.25 HC + 7 HBE
  • Langue d'enseignement : Anglais
  • Méthode d'enseignement : En présence
  • Code : NEEC5B

Objectifs

At the end of the first part of the training dedicated to the analysis of the power transistor switching mechanisms, the students will be able to determine correctly the dynamic performance of a complete eletrical system involving the Driver circuit in its environment by showing that they are able to analyze waveforms when it is necessary to determine the overall losses associated with the switchings.

 

After the second part dedicated to the study of the disturbances due to the presence of parasitic components, the students will be able to read a data sheet and make relevant choices by showing that they master the concepts related to Driver circuits and its EMC issues when it is necessary to implement the switching-cells of a SMPS-type converter.

Description

The course is divided into 3 distinct parts:

-       1) the behavior of a MOSFET or IGBT transistor during a turn-on event is analysed in detail (gate-to-source Vgs vs gate charges Qg, behavior of the capacitors Cgs, Cgd, Cds, the Miller plateau, dId/dt and dVds/dt equations),

-       2) the peripheral functions of the driver: bootstrap circuitry, charge pump, isolated power supplies, transmission of isolated control signal and immunity to dv/dt, synchronous rectification, dead-time notion, influence of parasitic components (inductive and capacitive) during a switching event,

-       3) the physical implementation of the Driver circuit (IC level) and study of the resonant topologies (principle and efficiency analysis).

 

Practical work session using Cadence-Pspice simulator helps to illustrate through waveform analysis the several concepts covered in the course, namely: the turn-on and turn-off events, the design of a charge-pump circuit, the behavior of a resonant driver topology.

Compétences visées

- Know how to read the datasheet of a Driver circuit, to estimate the losses related to the control circuit,

- Have a depth knowledge of the switching-cell behavior,

- Be able to make the right choices for the components in the design of a power board,

- Obtain a good understanding of the design rules related to the PCB drawing to minimize EMI issues due to the switchings.

Bibliographie

A. D. Pathak, « MOSFET/IGBT Drivers Theory And Applications » - IXYS Colorado.

B. Multon, S. Lefebvre, « MOSFET et IGBT : circuits de commande », TI, D3 233.

Yuhui Chen and all,« A resonant MOSFET gate driver with efficient energy recovery », IEEE Trans. on Power Electronics, Vol. 19, No. 2, March 2004.

Conditions d'admission

Knowledge of the basic concepts related to the power transistor main characteristics (parameters, technology, MOSFET / IGBT) as well as the basics about Switch Mode Power Supply.

Contact(s)

COUSINEAU Marc

Tél : 2431

Email : Marc.Cousineau @ enseeiht.fr

Lieu(x)

  • Toulouse

Contactez l’ENSEEIHT

L’École Nationale Supérieure d'Électrotechnique, d'Électronique, d'Informatique, d'Hydraulique et des Télécommunications

2, rue Charles Camichel - BP 7122
31071 Toulouse Cedex 7, France

+33 (0)5 34 32 20 00

Certifications

  • Logo MENESR
  • Logo UTFTMP
  • Logo INP
  • Logo INPT
  • Logo Mines télécoms
  • Logo CTI
  • Logo CDEFI
  • Logo midisup